Memristive Memory Enhancement by Device Miniaturization for Neuromorphic Computing

The areal footprint of memristors is a key consideration in material-based neuromorphic computing and large-scale architecture integration. Electronic transport the most widely investigated memristive devices mediated by filaments, posing challenge to their scalability implementation. Here, compelling alternative device presented it demonstrated that downscaling leads enhancement memory window, while maintaining analog behavior, contrary expectations. designs directly integrated on semiconducting Nb-doped SrTiO3 (Nb:STO) allows leveraging electric field effects at edges, increasing dynamic range smaller devices. findings are substantiated studying microscopic nature switching using scanning transmission electron microscopy, different resistive states, revealing an interfacial layer whose physical extent influenced applied fields. ability Nb:STO satisfy hardware software requirements with downscaling, significantly enhancing functionalities, make them strong contenders for non-von-Neumann computing, beyond complementary metal–oxide–semiconductor.